Metalorganic vapor phase epitaxy 1994MINAGAWA, SHIGEKAZU; HORIKOSHI, YOSHIJI.Journal of crystal growth. 1994, Vol 145, Num 1-4, issn 0022-0248, 1022 p.Conference Proceedings

In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorptionKOBAYASHI, N.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 1-11, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy using organic group V precursorsKOMENO, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 468-472, issn 0022-0248Conference Paper

Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodesNAKAMURA, S.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 911-917, issn 0022-0248Conference Paper

A study of the growth kinetics of II-VI metalorganic vapour phase epitaxy using in situ laser reflectometryIRVINE, S. J. C; BAJAJ, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 74-81, issn 0022-0248Conference Paper

Characterization of GaInP layers grown on GaAs substrates monitored by surface photo-absorptionYANAGISAWA, H; TANAKA, T; MINAGAWA, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 12-16, issn 0022-0248Conference Paper

Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInPMANNOH, M; ISHIBASHI, A; OHNAKA, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 158-163, issn 0022-0248Conference Paper

Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporationHUANG, J. W; KUECH, T. F.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 462-467, issn 0022-0248Conference Paper

Highly uniform InGaAsP growth by dual-layer structure metalorganic vapor phase epitaxy reactor with atmospheric pressureMATSUMOTO, T; NAKAMURA, T.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 622-629, issn 0022-0248Conference Paper

Misfit dislocation arrangements at (Hg_xMn_1-x)Te/CdTe and (Hg_xMn_1-x)Te/CdZnTe heterointerfaces on (001), (111)B and (112)B substratesTATSUOKA, H; DUROSE, K; FUNAKI, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 589-595, issn 0022-0248Conference Paper

Strained InGaAs quantum wire and box structures self-organized on high-index GaAs (n11)A and (n11)B substratesNÖTZEL, R; TEMMYO, J; TAMAMURA, T et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 990-991, issn 0022-0248Conference Paper

Evaluation of p-n junction shift by the capacitance-voltage methodYAMAMOTO, N; YAMAMOTO, M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 941-946, issn 0022-0248Conference Paper

High-resolution transmission electron microscopy characterization of III-IV compounds in Si grown by metalorganic chemical vapor depositionSOGA, T; JIMBO, T; UMENO, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 358-362, issn 0022-0248Conference Paper

Highly selective InGaAs growth by metalorganic chemical vapor deposition with a high-speed rotating susceptorIDA, M; KURISHIMA, K; KOBAYASHI, T et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 237-241, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy growth and nitrogen-doping of Zn_xCd_1-xS using photo-assistanceDUMONT, H; FUJITA, SZ; FUJITA, SG et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 570-575, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy growth of (In_xGa_1-xN/GaN)ⁿ layered structures and reduction of indium dropletsSHIMIZU, M; HIRAMATSU, K; SAWAKI, N et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 209-213, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodesHORITA, M; USAMI, M; MATSUSHIMA, Y et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 291-296, issn 0022-0248Conference Paper

Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxySASAKI, T; YAMAGUCHI, M; KITAMURA, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 846-851, issn 0022-0248Conference Paper

Temperature dependence of solid-vapor compositional relation in epitaxial growth of GaAs_xSb_1-x by low-pressure metalorganic chemical vapor depositionIWAMURA, Y; TAKEUCHI, T; WATANABE, N et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 82-86, issn 0022-0248Conference Paper

An initio study on the dimer structures of trimethylaluminum and dimethylaluminumhydrideHIRAOKA, Y. S; MASHITA, M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 473-477, issn 0022-0248Conference Paper

Carbon doping in metalorganic vapor phase epitaxyKUECH, T. F; REDWING, J. M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 382-389, issn 0022-0248Conference Paper

Effect of strain on source gas decomposition and group V desorption in metalorganic vapor phase epitaxy studied by surface photo-absorptionKOBAYASHI, Y; KOBAYASHI, N.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 17-21, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxial growth of GaAs on ZnSe; on the flow sequence of source precursors at the interfaceFUNATO, M; FUJITA, S; FUJITA, S et al.FUJITA, S; FUJITA, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 616-621, issn 0022-0248Conference Paper

Observation of a new in-situ optical monitoring signal with monolayer resolution in metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy of wide-gap II-VI compoundsYOSHIKAWA, A; KOBAYASHI, M; TOKITA, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 68-73, issn 0022-0248Conference Paper

Precise control of lattice strain in carbon-doped GaAs by indium co-doping for reliable AlGaAs/GaAs heterojunction bipolar transistorsWATANABE, N; NITTONO, T; ITO, H et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 929-934, issn 0022-0248Conference Paper